SQS840EN

www.vishay.com SQS840EN Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V RDS(on) (Ω) at VGS = 4.5 V ID (A) Configuration 40 0.0200 0.0300 12 Single PowerPAK® 1212-8 Single D D8 D7 D6 5 FEATURES TrenchFET® power MOSFET AEC-Q101 qualified d 100 % Rg and UIS tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 D 3.3 mm 1 3.3 mm Top View Marking Code: Q004 ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free 1 2S 3S 4S G Bottom View PowerPAK 1212-8 SQS840EN-T1-GE3 G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Continuous Source Current (Diode Conduction) a Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation b Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) e, f TC = 25 °C TC = 125 °C L = 0.1 mH TC = 25 °C TC = 125 °C VDS VGS ID IS IDM IAS EAS PD TJ, Tstg LIMIT 40 ± 20 12 12 12 48 19 18 33 11 -55 to +175 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT Junction-to-Ambient Junction-to-Case (Drain) PCB Mount c RthJA 81 °C/W RthJC 4.5 Notes a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR4 material). d. Parametric veri...