Semiconductor
SRA2212M
PNP Silicon Transistor
Descriptions
• Switching application • Interface circuit and driver circ...
Semiconductor
SRA2212M
PNP Silicon Transistor
Descriptions
Switching application Interface circuit and driver circuit application
Features
With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process High packing density
Ordering Information
Type NO. SRA2212M Marking 2212 Package Code TO-92M
Outline Dimensions
4.0±0.1 3.0±0.1
unit : mm
Equivalent Circuit
C(OUT)
0.44 REF 0.52 REF
B(IN) 14.0±0.40
R1
R1 = 100KΩ
E(COMMON) 1.27 Typ. 2.54 ± 0.1.
1 2 3
0.7 Typ.
3.0±0.1 3.8 Min.
0.42 Typ.
PIN Connections 1. Emitter 2. Collector 3. Base
KSR-I019-000
1
SRA2212M
Absolute maximum ratings
Characteristic
Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature
(Ta=25°C)
Symbol
VCBO VCEO VEBO IC PD TJ TSTG
Ratings
-50 -50 -5 -100 400 150 -55 ~ 150
Unit
V V V mA mW °C °C
Electrical Characteristics
Characteristic
Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation
Voltage Transition Frequency Input Resistance
(Ta=25°C)
Symbol
ICBO IEBO hFE VCE(SAT) fT
*
Test Condition
VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-5V, IC=-1mA IC=-10mA, IB=-0.5mA VCE=-10V, IC=-5mA -
Min. Typ. Max.
120 -0.1 250 100 -500 -500 -0.3 -
Unit
nA nA V MHz KΩ
R1
* : Characteristic of Transistor Only
Electrical Characteristic Curves
Fig. 1 hFE - IC Fig. 2 VCE(SAT) - IC
KSR-I019-000
2
...