SRF2065

MOSPEC Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. Features * Low Forward Voltage. * Low Switching noise. * High Current Capacity * Guarantee Reverse Avalanche. * Guard-Ring for Stress Protection. * Low Power Loss & High efficiency. * 150℃ Operating Junction Temperature * Low Stored Charge Majority Carrier Conduction. * Plastic Material used Carries Underwriters Laboratory Mechanical Data ＊Case :JEDEC ITO-220AB molded plastic body ＊Terminals: Plated lead, solderable per MIL-STD-750, Method 2026 ＊Polarity: As marked ＊Mounting Torque: 4-6kg.cm ＊Weight:1.7 g approx. ＊ESD: 8KV(Min.) Human-Body Model ＊In compliance with EU RoHs 2002/95/EC directives MAXIMUM RATINGS Characteristic Symbol Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR RMS Reverse Voltage VR(RMS) Average Rectifier Forward Current ( Per diode ) Total Device (Rated VR),TC=125℃ IF(AV) Peak Repetitive Forward Current (Rate VR, Square Wave, 20kHz) Non-Repetitive Peak Surge Current (Surge applied at rate load conditions halfware, single phase, 60Hz) IFM IFSM Operating and Storage Junction Temperature Range TJ , TSTG ELECTRIAL CHARACTERISTICS Character...