SS1040F

SMD Type Schottky Diodes SS1020F ~ SS10100F Diodes ■ Features ● Fast switching speed ● Low power loss, high efficieucy ● Surface mount package ideally suited for autonatic insertion SOD-123F Unit:mm Cathode Band Top View 0.8± 0.1 1.85 ± 0.1 0.20 1.20 ~ 1.35 2.8 ± 0.1 0.65 ± 0.1 3.7 ± 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol SS1020F SS1030F SS1040F SS1060F SS10100F Unit Repetitive Peak Reverse Voltage Reverse Breakdown Voltage @ IR =500μA Reverse Voltage Forward Voltage Ta=65℃ Averaged Forward Current.Ta=75℃ Peak Forward Surge Current @ t=8.3ms Reverse Voltage Leakage Current Typical Junction Capacitance Junction Temperature Storage Temperature VRRM VBR VR VF IFAV IFSM IR Cj Tj Tstg 20 30 40 60 0.55 60 1 30 500 125 -55 to 125 0.7 50 100 V 0.85 A μA 40 pF ℃ ■ Marking NO. Marking SS1020F SS1030F SS1040F SS1060F SS10100F G2 G3 G4 G6 G10 www.kexin.com.cn 1 SMD Type Diodes Schottky Diodes SS1020F ~ SS10100F AVERAGE FORWARD RECITIFIED CURRENT AMPERES ■ Typical Characterisitics 1 0.75 0.5 SINGLE PHASE HALF WAVE 60Hz RESTSTIVE OR INDUCTIVE LOAD P.C.B MOUNTED 0.25 ON 0.2x0.2 (,, 5.0x5.0mm) COPPER PAD AREAS 0 0 25 50 75 100 125 150 175 LEAD TEMPERATURE,OC REVERSE CURRENT, A 104 103 102 10 1 0.1 0 TJ 125 OC TJ 75 OC TJ 25 OC 20 40 REVERSE VOLTAGE,VR(V) 60 FIG. 1-FORWARD CURRENT DERATING CURVE FIG. 2-TYPICAL REVERSE CHARACTERISTIC INSTANTANEOUS FORWARD CURRENT, AMPERES 1000 100 20 - 40V 60V 20 20-40V 10 60V CAPACITANCE,(pF) 10...