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SS2412

SEC

CMOS High Sensitivity Micropower Hall Latch

SS2412 CMOS High Sensitivity Micropower Hall Latch Features and Benefits – Micropower consumption for battery powered a...


SEC

SS2412

File Download Download SS2412 Datasheet


Description
SS2412 CMOS High Sensitivity Micropower Hall Latch Features and Benefits – Micropower consumption for battery powered applications – Latching output – Operation down to 2.5V – High sensitivity for direct reed switch re- placement applications – Chopper stabilized amplifier stage Application Examples – Solid state switch – Handheld Wireless Handset Awake Switch – Lid close sensor for battery powered devices 3 pin SOT23 (suffix SO) 3 pin SIP (suffix UA) Functional Block Diagram VDD Sleep/Awake Li OUT Chopper Hall GND 1 V3.10 Nov 1, 2013 SS2412 CMOS High Sensitivity Micropower Hall Latch General Description The SS2412 latching Hall effect sensor IC is fabricated from mixed signal CMOS technology. It incorporates advanced chopper-stabilization techniques to provide accurate and stable magnetic switch points. The circuit design provides an internally controlled clocking mechanism to cycle power to the Hall element and analog signal processing circuits. This serves to place the high current-consuming portions of the circuit into a “Sleep” mode. Periodically the device is “Awakened” by this internal logic and the magnetic flux from the Hall element is evaluated against the predefined thresholds. This device requires the presence of both south and north polarity magnetic fields for operation. In the presence of a south polarity field of sufficient strength, the device output latches on, and only switches off when a north polarity field of sufficient strength is present. Wh...




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