SS2412
CMOS High Sensitivity Micropower Hall Latch
Features and Benefits
– Micropower consumption for battery powered a...
SS2412
CMOS High Sensitivity Micropower Hall Latch
Features and Benefits
– Micropower consumption for battery powered applications
– Latching output – Operation down to 2.5V – High sensitivity for direct reed switch re-
placement applications – Chopper stabilized amplifier stage
Application Examples
– Solid state switch – Handheld Wireless Handset Awake Switch – Lid close sensor for battery powered devices
3 pin SOT23 (suffix SO)
3 pin SIP (suffix UA)
Functional Block Diagram
VDD Sleep/Awake Li
OUT
Chopper
Hall GND
1 V3.10 Nov 1, 2013
SS2412
CMOS High Sensitivity Micropower Hall Latch
General Description
The SS2412 latching Hall effect sensor IC is fabricated from mixed signal
CMOS technology. It incorporates advanced chopper-stabilization techniques to provide accurate and stable magnetic switch points.
The circuit design provides an internally controlled clocking mechanism to cycle power to the Hall element and analog signal processing circuits. This serves to place the high current-consuming portions of the circuit into a “Sleep” mode. Periodically the device is “Awakened” by this internal logic and the magnetic flux from the Hall element is evaluated
against the predefined thresholds. This device requires the presence of both south and north polarity magnetic fields for operation. In the presence of a south polarity field of sufficient strength, the device output latches on, and only switches off when a north polarity field of sufficient strength is present.
Wh...