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SS8050

Samsung

NPN EPITAXIAL SILICON TRANSISTOR

SS8050 NPN EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • Compl...



SS8050

Samsung


Octopart Stock #: O-957567

Findchips Stock #: 957567-F

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Description
SS8050 NPN EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • Complimentary to SS8550 Ε Collector Current IC=1.5A • Collector Dissipation:PC=2W (TC=25 ) ÎABSOLUTE MAXIMUM RATINGS (TA=25 ) Characteristic Symbol Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Colle
More View ctor Current Collector Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PC TJ TSTG 1. Emitter 2. Base 3. Collector 40 25 6 1.5 1 150 -65 ~ 150 Unit V V V A WÎÎ TO-92 ÎELECTRICAL CHARACTERISTICS (TA=25 ) Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage Output Capacitance Current Gain-Bandwidth Product Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 hFE3 VCE (sat) VBE (sat) VBE COB fT Test Conditions ÀIC=100 , IE=0 ÀIC=2mA, IB=0 IE=100 , IC=0 VCB=35V, IE=0 VEB=6V, IC=0 VCE=1V, IC=5mA VCE=1V, IC=100mA VCE=1V, IC=800mA IC=800mA, IB=80mA IC=800mA, IB=80mA VCE=1V, IC=10mA VCB=10V, IE=0 f=1MHz VCE=10V, IC=50mA hFE(2) CLASSIFICATION Classification B hFE(2) 85-160 C 120-200 D 160-300 Min 40 25 6 45 85 40 100 Typ 135 160 110 0.28 0.98 0.66 9.0 190 Max 100 100 300 0.5 1.2 1 Unit V V V nA nA V V V pF MHz SS8050 NPN EPITAXIAL SILICON TRANSISTOR






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