SS8050 — NPN Epitaxial Silicon Transistor
November 2014
SS8050 NPN Epitaxial Silicon Transistor
Features
• 2 W Output...
SS8050 — NPN Epitaxial Silicon Transistor
November 2014
SS8050 NPN Epitaxial Silicon Transistor
Features
2 W Output Amplifier of Portable Radios in Class B Push-pull Operation. Complimentary to SS8550 Collector Current: IC = 1.5 A
1
TO-92
1. Emitter 2. Base 3. Collector
Ordering Information
Part Number SS8050BBU SS8050CBU SS8050CTA SS8050DBU SS8050DTA
Top Mark S8050 S8050 S8050 S8050 S8050
Package TO-92 3L TO-92 3L TO-92 3L TO-92 3L TO-92 3L
Packing Method Bulk Bulk Ammo Bulk Ammo
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VCBO VCEO VEBO
IC TJ TSTG
Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current Junction Temperature Storage Temperature
40
V
25
V
6
V
1.5
A
150
°C
-65 to 150
°C
© 2004 Fairchild Semiconductor Corporation SS8050 Rev. 1.1.0
www.fairchildsemi.com
SS8050 — NPN Epitaxial Silicon Transistor
Thermal Characteristics(1)
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
Power Dissipation
PD
Derate Above 25°C
1
W
8
mW/°...