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SS8P3C

Vishay Siliconix

(SS8P3C / SS8P4C) High Current Density Surface Mount Dual Common-Cathode Schottky Rectifier

www.DataSheet.co.kr New Product SS8P3C, SS8P4C Vishay General Semiconductor High Current Density Surface Mount Dual C...


Vishay Siliconix

SS8P3C

File Download Download SS8P3C Datasheet


Description
www.DataSheet.co.kr New Product SS8P3C, SS8P4C Vishay General Semiconductor High Current Density Surface Mount Dual Common-Cathode Schottky Rectifier eSMP TM Series K FEATURES Very low profile - typical height of 1.1 mm Ideal for automated placement Low forward voltage drop, low power losses High efficiency Low thermal resistance Meets MSL level 1, per LF maximum peak of 260 °C AEC-Q101 qualified J-STD-020, 1 2 TO-277A (SMPC) K Cathode Anode 1 Anode 2 Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC Halogen-free according to IEC 61249-2-21 definition PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM EAS VF at IF = 4 A TJ max. 2 x 4.0 A 30 V, 40 V 120 A 20 mJ 0.42 V 150 °C MECHANICAL DATA Case: TO-277A (SMPC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS compliant, and automotive grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters and polarity protection application. MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Device marking code Maximum repetitive peak reverse voltage total device Maximum average forward rectified current (fig. 1) per diode Peak forward surge ...




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