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SS9012

Fairchild Semiconductor

NPN Epitaxial Silicon Transistor

SS9012 SS9012 1W Output Amplifier of Potable Radios in Class B Push-pull Operation. • • • • High total power dissipatio...


Fairchild Semiconductor

SS9012

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Description
SS9012 SS9012 1W Output Amplifier of Potable Radios in Class B Push-pull Operation. High total power dissipation. (PT=625mW) High Collector Current. (IC= -500mA) Complementary to SS9013 Excellent hFE linearity. 1 TO-92 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings -40 -20 -5 -500 625 150 -55 ~ 150 Units V V V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE (sat) VBE (sat) VBE (on) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Test Condition IC = -100µA, IE =0 IC = -1mA, IB =0 IE = -100µA, IC =0 VCB = -25V, IE =0 VEB = -3V, IC =0 VCE = -1V, IC = -50mA VCE = -1V, IC = -500mA IC = -500mA, IB = -50mA IC = -500mA, IB = -50mA VCE = -1V, IC = -10mA -0.6 64 40 120 90 -0.18 -0.95 -0.67 Min. -40 -20 -5 -100 -100 202 -0.6 -1.2 -0.7 V V V Typ. Max. Units V V V nA nA hFE Classification Classification hFE1 D 64 ~ 91 E 78 ~ 112 F 96 ~ 135 G 112 ~ 166 H 144 ~ 202 ©2002 Fairchild Semiconductor Corporation Re...




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