*Customer:
Pb Free
SPECIFICATION
ITEM MODEL Revision Date CHIP LED DEVICE SSC-HB601
[Contents]
www.DataSheet4U.com
...
*Customer:
Pb Free
SPECIFICATION
ITEM MODEL Revision Date CHIP LED DEVICE SSC-HB601
[Contents]
www.DataSheet4U.com
1. Features 2. Absolute maximum ratings 3. Electro-optical characteristics 4. Characteristic diagram 5. Soldering profile 6. Outline dimension 7. Packing 8. Reel packing structure 9. Label Structure 10. Precaution for use 11. Ranks
Customer
Approved by Approved by Approved by
Supplier
Drawn by Checked by Approved by
SSC-QP-0401-06(REV.1)
SEOUL SEMICONDUCTOR CO,. LTD. 148-29 Kasan-Dong, Keumchun-Gu, Seoul, Korea TEL: 82-2-3281-6269 FAX: 82-2-858-5537
SSC-HB601 Seoul Semiconductor
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1. Features
Package : 2.1×1.0×0.6 mm Untinted, Diffused flat mold Wavelength : 470 nm
2. Absolute Maximum Ratings Parameter Power Dissipation Symbol Pd IF IFM*1 VR Topr Tstg Value 72 20 60 5 -30 ~ +85 -40 ~ +100
(Ta=25℃) Unit mW mA mA V ℃ ℃
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Forward Current
Peak Forward Current Reverse
Voltage Operating Temperature Storage Temperature
*1 IFM conditions : Pulse width Tw ≤ 0.1msec. Duty ratio ≤ 1/10 IFM applies for the condition : Tw ≤ 0.1msec and Duty cycle ≤ 1/10
3. Electro-Optical Characteristics Parameter Forward
Voltage Reverse Current Luminous Intensity*2 Wavelength Spectral Bandwidth Viewing angle*3 Symbol VF IR IV λ Δλ 2θ
1/2
(Ta=25℃) Condition IF=5mA VR=5V IF=5mA IF=5mA IF=5mA IF=5mA Min 2.7 14 465 Typ 2.9 24 470 30 150 Max 3.1 10 40 475 Unit V ㎂ mcd nm nm ˚
*2 The luminous intensity IV is measured at the peak of the spatial pattern w...
