SSC8019GN2
P-Channel Enhancement Mode MOSFET
Features
VDS -18V
VGS ±12V
RDSon TYP 21mR@-4V5 26mR@-2V5 35mR@-1V8 4...
SSC8019GN2
P-Channel Enhancement Mode
MOSFET
Features
VDS -18V
VGS ±12V
RDSon TYP 21mR@-4V5 26mR@-2V5 35mR@-1V8 45mR@-1V5
ID -6.5A
Applications
Load Switch
Portable Devices DCDC conversion
Charging
Driver for Relay,Solenoid,Motor,LED etc.
General Description
This device is produced with high cell density DMOS trench technology, Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device particularly suits low
voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package. Excellent thermal and electrical capabilities.
Pin Configuration
Top View
D: Drain; G: Gate; S: Source
Package Information
SSC-1V0
http://www.afsemi.com
1/5
Analog Future
SSC8019GN2
Absolute Maximum Ratings @TA=25℃ unless otherwise noted
Parameter
Symbol
Drain-Source
Voltage
VDSS...
