SSC8025GS6

SSC8025GS6 P-Channel Enhancement Mode MOSFET with ESD Protection  Features VDS VGS -20V ±8V RDSon TYP 50m R@-4V5 60m R@-2V5 70m R@-1V8 96m R@-1V5 ID ESD -4A 3kV  Applications  Load Switch  Portable Devices  DCDC Conversion  Pin configuration Top View D  General Description This device uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 1.5V and it is protected from ESD. These feathures make it suitable for use as a load switch or in PWM applications.  Package Information GS ③ ①② SOT23 Unit:mm SSC-4V0 http://www.afsemi.com 1/4 SSC8025GS6  Absolute Maximum Ratings @ TA = 25°C unless otherw ise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current(1) Pow er Dissipation(1) Continuous Pulsed Operating and Storage Junction Temperature Range V DSS V GSS ID PD TJ, TSTG Ratings -20 ±8 -4 -20 450 -55 to +150 Unit V V A mW °C  Electrical Characteristics @ TA = 25°C unless otherw ise noted Parameter(2) Symbol Test Conditions Drain-Source Breakdown Voltage Zero Gate Voltage Drain Curren V(BR)DSS IDSS VGS = 0V, ID = -250uA VDS = -20V, VGS = 0V Gate-Body Leakage Gate Threshold Voltage IGSS VGS(TH) VGS = ±8V, VDS = 0V VDS = VGS, ID = -250uA Static Drain-Source On-Resistance RDS (ON) VGS = -4.5V, ID = -4A VGS = -2.5V, ID = -3A VGS = -1.8V, ID = -2A VGS = -1.5V, ID = -1A Forward Transconductance Diode Forw ard Voltage Input Capacitance Output Capacita...