SSC8028GT3
N-Channel Enhancement Mode MOSFET
Features
VDS VGS
RDSon TYP
ID
Applications Desktop Computer N...
SSC8028GT3
N-Channel Enhancement Mode
MOSFET
Features
VDS VGS
RDSon TYP
ID
Applications Desktop Computer Notebook
20V ±16V
11mR@10V 16mR@4V5
12A
Pin configuration
General Description
Top View
This device uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. This device is
suitable for use as a load switch or in PWM applications.
Package Information
SSC-V1.0
http://www.afsemi.com h // S i P
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Analog Future
SSC8028GT3
Absolute Maximum Ratings @ TA = 25°C unless otherwise noted
Parameter
Symbol
Drain-Source
Voltage
VDSS
Gate-Source
Voltage
VGSS
Drain Current (Note 1)
Continuous TA=25°C Pulsed (Note 2)
ID IDM
Total Power Dissipation (Note 1)
PD
Operating and Storage Junction Temperature Range
TJ, TSTG
Electrical Characteristics @ TA = 25°C unless otherwise noted
Limit 20 ±16 12 30 2.5
-55 to 150
Unit V V A A W °C
Parameter
Symbol
Test Conditions
Drain–Source Breakdown
Voltage ...