DatasheetsPDF.com

SSC8030GS1 Datasheet

Part Number SSC8030GS1
Manufacturers AFSEMI
Logo AFSEMI
Description N-Channel Enhancement Mode MOSFET
Datasheet SSC8030GS1 DatasheetSSC8030GS1 Datasheet (PDF)

SSC8030GS1 N-Channel Enhancement Mode MOSFET  Features  VDS 30V VGS ±20V RDSon TYP 8.5mR@10V 10.5mR@4V5 ID 12A   General Description This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Applications  Load Switch  PC/NB  DCDC conversion Pin configuration Top View  Package Information ⑧ ⑦ ⑥⑤ ①② ③④ SOP8 Unit:mm SSC-V1.0 http://www.afsemi.com h // S i P 1/4 Analog.

  SSC8030GS1   SSC8030GS1






N-Channel Enhancement Mode MOSFET

SSC8030GS1 N-Channel Enhancement Mode MOSFET  Features  VDS 30V VGS ±20V RDSon TYP 8.5mR@10V 10.5mR@4V5 ID 12A   General Description This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Applications  Load Switch  PC/NB  DCDC conversion Pin configuration Top View  Package Information ⑧ ⑦ ⑥⑤ ①② ③④ SOP8 Unit:mm SSC-V1.0 http://www.afsemi.com h // S i P 1/4 Analog Future SSC8030GS1  Absolute Maximum Ratings @ TA = 25°C unless otherwise specified Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Plused Drain Current (Note 2) Total Power Dissipation (Note 1) Operating and Storage Junction Temperature Range VDSS VGSS ID IDM PD TJ, TSTG N-channel 30 ±20 12 50 2 -55 to +150 Unit V V A A W °C  Electrical Characteristics @ TA = 25°C unless otherwise specified Paramete.


2018-12-15 : SSC8015GS6    SSC8131GS6A    SSC8131GS6    SSC8029GS6A    SSC8415GS6    SSC8121GN1    HEF4081B    N1265LS160    LTD141    N1265LS120   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)