SSC8030GT4
N-Channel Enhancement Mode MOSFET
Features
VDS 30V
VGS ±20V
RDSon TYP 8.5mR@10V 10.5mR@4V5
ID 75A
General Description
This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
Applications
Load Switch
PC/NB DCDC conv...
