SSC8032GT4
N-Channel Enhancement Mode MOSFET
Features
VDS 30V
VGS ±20V
RDSon TYP 12mR@10V 16mR@4V5
ID 56A
...
SSC8032GT4
N-Channel Enhancement Mode
MOSFET
Features
VDS 30V
VGS ±20V
RDSon TYP 12mR@10V 16mR@4V5
ID 56A
General Description
This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
Applications
Load Switch
PC/NB DCDC conversion
Pin configuration
Top View
S D G
Package Information
Unit: mm TO220
SSC-V1.0
http://www.afsemi.com
1/4
Analog Future
SSC8032GT4
Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current (Note 1) Plused Drain Current (Note 2) Total Power Dissipation (Note 1) Operating and Storage Junction Temperature Range
VDSS VGSS
ID IDM PD TJ, TSTG
N-channel 30 ±20 56 220 70
-55 to +150
Unit V V A A W °C
Electrical Characteristics @ TA = 25°C unless otherwise specified
Parameter Drain–Source Breakdown Voltag...
