DatasheetsPDF.com

SSC8037GT8 Datasheet

Part Number SSC8037GT8
Manufacturers AFSEMI
Logo AFSEMI
Description P-Channel Enhancement Mode MOSFET
Datasheet SSC8037GT8 DatasheetSSC8037GT8 Datasheet (PDF)

SSC8037GT8 P-Channel Enhancement Mode MOSFET  Features VDS -30V VGS ±20V RDSon TYP 27mR@-10V 39mR@-4V5 ID -8A  Applications  Load Switch  DCDC conversion  NB battery  Pin Configuration  General Description Top View This device is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage power management requiring a wild range of given voltage ratings(4.5V~25V) such as .

  SSC8037GT8   SSC8037GT8






Part Number SSC8037GT4
Manufacturers AFSEMI
Logo AFSEMI
Description Dual P-Channel Enhancement Mode MOSFET
Datasheet SSC8037GT8 DatasheetSSC8037GT4 Datasheet (PDF)

SSC8037GT4 Dual P-Channel Enhancement Mode MOSFET  Features VDS -30V VGS ±20V RDSon TYP 27mR@-10V 39mR@-4V5 ID -15A  Applications  Load Switch  DCDC conversion  NB battery  Pin configuration  General Description Top View This device is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage power management requiring a wild range of given voltage ratings(4.5V~25V) su.

  SSC8037GT8   SSC8037GT8







P-Channel Enhancement Mode MOSFET

SSC8037GT8 P-Channel Enhancement Mode MOSFET  Features VDS -30V VGS ±20V RDSon TYP 27mR@-10V 39mR@-4V5 ID -8A  Applications  Load Switch  DCDC conversion  NB battery  Pin Configuration  General Description Top View This device is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage power management requiring a wild range of given voltage ratings(4.5V~25V) such as load switch and battery protection.  Package Information SSC-1V0 Units:mm http://www.afsemi.com 1/4 Analog Future SSC8037GT8  Absolute Maximum Ratings @TA = 25℃ unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Continuous TA=25°C Pulsed (Note 2) Total Power Dissipation (Note 1) Operating and Storage Junction Temperature Range Symbol VDSS VGSS ID IDM PD TJ, TSTG Limit -30 ±20 -8 -30 2.5 -55 to 150 Unit V V A A.


2018-12-15 : SSC8015GS6    SSC8131GS6A    SSC8131GS6    SSC8029GS6A    SSC8415GS6    SSC8121GN1    HEF4081B    N1265LS160    LTD141    N1265LS120   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)