SSC8062GS1

SSC8062GS1 N-Channel Enhancement Mode Power MOSFET  Features  Applications VDS 60V VGS ±20V RDSon TYP 30mR@10V 35mR@4V5 ID 6A  Load Switcing;  PWM application  General Description  Pin configuration SSC8062GS1 uses advanced trench technology to provide excellent RDS(ON). It is particularly suitable for DCDC conversion and motor driver.  Package Information ⑧ ⑦ ⑥⑤ ①② ③④ SOP8 Unit:mm SSC-V1.0 http://www.afsemi.com 1/5 Analog Future SSC8062GS1  Absolute Maximum Ratings @ TA = 25°C unless otherwise specified Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage Drain Current Continuous Pulse Total Power Dissipation (note1) Operating and Storage Junction Temperature Range Note1: Surface Mounted on 1in pad area. VGSS ID IDM PD TJ, TSTG  Electrical Characteristics @ TA = 25°C unless otherwise specified Ratings 60 ±20 6 45 2 -55 to +150 Parameter(note2) Symbol Test Conditions Min Typ OFF CHARACTERISTIC...