SSC8062GT8
N-Channel Enhancement Mode Power MOSFET
Features
Applications
VDS 60V
VGS ±20V
RDSon TYP 30mR@10V 3...
SSC8062GT8
N-Channel Enhancement Mode Power
MOSFET
Features
Applications
VDS 60V
VGS ±20V
RDSon TYP 30mR@10V 35mR@4V5
ID 9A
E-tool; E-Toy;
Motor Driver
General Description
Pin Configuration
SSC8062GT8 uses advanced trench technology to provide excellent RDS(ON). It is particularly suitable for DCDC conversion and motor driver.
Package Information
Units:mm
SSC-V1.0
http://www.afsemi.com
1/5
Analog Future
SSC8062GT8
Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
Drain-Source
Voltage
VDSS
Gate-Source
Voltage
Drain Current
Continuous Pulse
Total Power Dissipation (note1)
Operating and Storage Junction Temperature Range
Note1: Surface Mounted on 1in pad area.
VGSS ID IDM PD
TJ, TSTG
Electrical Characteristics @ TA = 25°C unless otherwise specified
Ratings 60 ±20 9 45 2.5
-55 to +150
Parameter(note2)
Symbol
Test Conditions
Min Typ
OFF CHARACTERISTICS
Drain–Source Breakdown Vol...
