SSC80K2GT8
N-Channel Enhancement Mode MOSFET
Features
VDS VGS 200V ±20V
RDSon TYP 510mR@10V 520mR@4V5
ID 2A
...
SSC80K2GT8
N-Channel Enhancement Mode
MOSFET
Features
VDS VGS 200V ±20V
RDSon TYP 510mR@10V 520mR@4V5
ID 2A
General Description
This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
Applications
Load Switch
Portable Devices DCDC conversion
Pin Configuration
Top View
Package Information
Units:mm
SSC-V1.0
http://www.afsemi.com
1/5
Analog Future
SSC80K2GT8
Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current (Note 1) Plused Drain Current (Note 2) Total Power Dissipation (Note 1) Operating and Storage Junction Temperature Range
VDSS VGSS
ID IDM PD TJ, TSTG
N-channel 200 ±20 2 8 3
-55 to +150
Unit V V A A W °C
Electrical Characteristics @ TA = 25°C unless otherwise specified
Parameter Drain–Source Breakdown
Voltage Ga...
