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SSC8120GS6 Datasheet

Part Number SSC8120GS6
Manufacturers AFSEMI
Logo AFSEMI
Description N-Channel Enhancement Mode MOSFET
Datasheet SSC8120GS6 DatasheetSSC8120GS6 Datasheet (PDF)

SSC8120GS6 N-Channel Enhancement Mode MOSFET  Features VDS 20V VGS ±12V RDSon TYP 310mR@4V5 490mR@2V5 850mR@1V8 ID 1.2A ESD 1.2K  General Description This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption.  Applications  Load Switch  Portable Devices  DCDC Conversion  Pin .

  SSC8120GS6   SSC8120GS6






Part Number SSC8120GS9
Manufacturers AFSEMI
Logo AFSEMI
Description N-Channel Enhancement Mode MOSFET
Datasheet SSC8120GS6 DatasheetSSC8120GS9 Datasheet (PDF)

SSC8120GS9 N-Channel Enhancement Mode MOSFET  Features  VDS VGS RDSon TYP ID ESD 300mR@4V5 20V ±12V 440mR@2V5 0.75A 1.2K 800mR@1V8   General Description This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption. Applications  Replace Digital Transistor  Battery Operated Sy.

  SSC8120GS6   SSC8120GS6







Part Number SSC8120GS8
Manufacturers AFSEMI
Logo AFSEMI
Description N-Channel Enhancement Mode MOSFET
Datasheet SSC8120GS6 DatasheetSSC8120GS8 Datasheet (PDF)

SSC8120GS8 N-Channel Enhancement Mode MOSFET  Features  VDS VGS RDSon TYP ID ESD 310mR@4V5 20V ±12V 490mR@2V5 0.8A 1.2K 850mR@1V8   General Description This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption.  Package Information Applications  Replace Digital Transistor.

  SSC8120GS6   SSC8120GS6







N-Channel Enhancement Mode MOSFET

SSC8120GS6 N-Channel Enhancement Mode MOSFET  Features VDS 20V VGS ±12V RDSon TYP 310mR@4V5 490mR@2V5 850mR@1V8 ID 1.2A ESD 1.2K  General Description This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption.  Applications  Load Switch  Portable Devices  DCDC Conversion  Pin configuration Top View  Package Information ③ ①② SOT23 Unit:mm SSC-V1.0 http://www.afsemi.com 1/4 Analog Future SSC8120GS6  Absolute Maximum Ratings @ TA = 25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation(1) Continuous Pulsed Operating and Storage Junction Temperature Range Symbol VDSS VGSS ID PD TJ, TSTG Ratings 20 ±12 1.2 3 250 -55 to +150  Electrical Characteristics @ TA = 25°C unle.


2018-12-15 : SSC8015GS6    SSC8131GS6A    SSC8131GS6    SSC8029GS6A    SSC8415GS6    SSC8121GN1    HEF4081B    N1265LS160    LTD141    N1265LS120   


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