SSC8120GS9
N-Channel Enhancement Mode MOSFET
Features
VDS
VGS
RDSon TYP
ID ESD
300mR@4V5
20V ±12V 440mR@2V5...
SSC8120GS9
N-Channel Enhancement Mode
MOSFET
Features
VDS
VGS
RDSon TYP
ID ESD
300mR@4V5
20V ±12V 440mR@2V5 0.75A 1.2K
800mR@1V8
General Description
This device is a N-Channel enhancement mode
MOSFET which is produced with high cell density and DMOS trench technology .This device particularly suits low
voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption.
Applications
Replace Digital Transistor Battery Operated Systems Power Supply Converter Circuits
Load/Power Switching Cell Phones, Pagers
Pin Configuration
Top View
Package Information
Package:SOT723
Unit:mm
Dim Min
Typ Max
A 0.430
-- 0.500
A1 0.000
-- 0.050
b 0.170
-- 0.270
b1 0.270
-- 0.370
c 0.080
-- 0.150
D 1.150
-- 1.250
E 1.150
-- 1.250
E1 0.750
-- 0.850
e 0.800TYP
θ 7°REF.
SSC-V1.0
http://www.afsemi.com
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SSC8120GS9
Absolute Maximum Ratings @ TA = 25°C unless otherwise sp...
