SSC8124GS6B

SSC8124GS6B N-Channel Enhancement Mode MOSFET  Features VDS VGS RDSon TYP 22mR@4V5 ID  Applications  Load Switch  Portable Devices  DCDC Conversion 20V ±12V 25mR@2V5 32mR@1V8 6A  Pin configuration  General Description Top View This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package. Excellent thermal and electrical capabilities.  Package Information ③ ①② SOT23 Unit:mm SSC-V1.0 http://www.afsemi.com 1/5 Analog Future SSC8124GS6B  Absolute Maximum Ratings @ TA = 25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation(1) Continuous Pulsed Operating and Storage Junction Te...