SSC8129GS1
P-Channel Enhancement Mode MOSFET
Features
VDS -20V
VGS ±12V
RDSon TYP 10mR@-4V5V 13mR@-2V5
ID -18A
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SSC8129GS1
P-Channel Enhancement Mode
MOSFET
Features
VDS -20V
VGS ±12V
RDSon TYP 10mR@-4V5V 13mR@-2V5
ID -18A
Applications
Load Switch
DCDC conversion NB battery
Pin configuration
General Description
Top View
This device is produced with high cell density, DMOS
trench technology, which is especially used to minimize
on-state resistance. This device is particularly suited for
low
voltage power management requiring a wild range
of given
voltage ratings(4.5V~25V) such as load switch
and battery protection.
Package Information
⑧ ⑦ ⑥⑤
①② ③④
SOP8 Unit:mm
SSC-1V0
http://www.afsemi.com
1/5
Analog Future
SSC8129GS1
Absolute Maximum Ratings @TA = 25℃ unless otherwise noted
Parameter Drain-Source
Voltage
Gate-Source
Voltage
Drain Current (Note 1)
Continuous TA=25°C Pulsed (Note 2)
Total Power Dissipation (Note 1) Operating and Storage Junction Temperature Range
Symbol VDSS VGSS
ID
PD TJ, TSTG
Limit -20 ±12 -18
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