SSC8131GS6

SSC8131GS6 P-Channel Enhancement Mode MOSFET  Features VDS VGS RDSon TYP 45mR@-10V ID  Applications  Load Switch  Portable Devices  DC/DC conversion -30V ±12V 52mR@-4V5 63mR@-2V5 -4A  Pin configuration  General Description Top View This device is particularly suited for low voltage application such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package Excellent thermal and electrical capabilities.  Package Information ③ ①② SSC-1V0 SOT23 Units:mm http://www.afsemi.com 1/5 Analog Future SSC8131GS6  Absolute Maximum Ratings @TA=25℃ unless otherwise noted Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGSS Maximum Drain Current – Continuous ID – Pulsed IDM Operating and Storage Temperature Range TJ,TSTG Ratings -30 ±12 -4 -15 -55 to 150 Unit V V A ℃  Electrical Characteristics...