SSC8132GN6
N-Channel Enhancement Mode MOSFET
Features
Applications
VDS 30V
VGS ±20V
RDSon TYP 1.7mR@10V 2.5mR@4V5
ID 100A
Load Switch
Portable Devices DCDC conversion
General Description
This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
Pin configuration
Package Information
Package:DFN5x6
SSC-V1.0
http://www.afsemi.com
1/5
Analog Future
SSC8132GN6
.
N-Channel Enhancement Mode MOSFET
SSC8132GN6
N-Channel Enhancement Mode MOSFET
Features
Applications
VDS 30V
VGS ±20V
RDSon TYP 1.7mR@10V 2.5mR@4V5
ID 100A
Load Switch
Portable Devices DCDC conversion
General Description
This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
Pin configuration
Package Information
Package:DFN5x6
SSC-V1.0
http://www.afsemi.com
1/5
Analog Future
SSC8132GN6
Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current(note1)
Continuous Pulse
Drain Current TA = 25°C Power Dissipation(note2)
TA = 25°C
Power Dissipation (note3)
TA = 25°C TA = 70°C
Operating and Storage Junction Temperature Range
VDSS VGSS
ID IDM IDSM PD
PDSM
TJ, TSTG
30 ±20 100 360 28 83 2.3 1.5 -55 to +150
V V A A W W °C
Note1. The maximum current rating is .