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SSC8132GN6 Datasheet

Part Number SSC8132GN6
Manufacturers AFSEMI
Logo AFSEMI
Description N-Channel Enhancement Mode MOSFET
Datasheet SSC8132GN6 DatasheetSSC8132GN6 Datasheet (PDF)

SSC8132GN6 N-Channel Enhancement Mode MOSFET  Features  Applications VDS 30V VGS ±20V RDSon TYP 1.7mR@10V 2.5mR@4V5 ID 100A  Load Switch  Portable Devices  DCDC conversion  General Description This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.  Pin configuration  Package Information Package:DFN5x6 SSC-V1.0 http://www.afsemi.com 1/5 Analog Future SSC8132GN6 .

  SSC8132GN6   SSC8132GN6






N-Channel Enhancement Mode MOSFET

SSC8132GN6 N-Channel Enhancement Mode MOSFET  Features  Applications VDS 30V VGS ±20V RDSon TYP 1.7mR@10V 2.5mR@4V5 ID 100A  Load Switch  Portable Devices  DCDC conversion  General Description This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.  Pin configuration  Package Information Package:DFN5x6 SSC-V1.0 http://www.afsemi.com 1/5 Analog Future SSC8132GN6 Absolute Maximum Ratings @ TA = 25°C unless otherwise specified Parameter Symbol Ratings Unit Drain-Source Voltage Gate-Source Voltage Drain Current(note1) Continuous Pulse Drain Current TA = 25°C Power Dissipation(note2) TA = 25°C Power Dissipation (note3) TA = 25°C TA = 70°C Operating and Storage Junction Temperature Range VDSS VGSS ID IDM IDSM PD PDSM TJ, TSTG 30 ±20 100 360 28 83 2.3 1.5 -55 to +150 V V A A W W °C Note1. The maximum current rating is .


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