SSC8136GT4
N-Channel Enhancement Mode MOSFET
Features
VDS 30V
VGS ±20V
RDSon TYP 3.5mR@10V 4.8mR@4V5
ID 106A
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SSC8136GT4
N-Channel Enhancement Mode
MOSFET
Features
VDS 30V
VGS ±20V
RDSon TYP 3.5mR@10V 4.8mR@4V5
ID 106A
Applications Desktop Computer Notebook DC-DC converter
Pin configuration
General Description
Top View
This device uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. This device is
suitable for use as a load switch or in PWM applications.
S D G
Package Information
SSC-V1.0
Unit: mm TO220
http://www.afsemi.com
1/5
Analog Future
SSC8136GT4
Absolute Maximum Ratings @ TA = 25°C unless otherwise noted
Parameter
Symbol
Drain-Source
Voltage
VDSS
Gate-Source
Voltage
VGSS
Drain Current (Note 1)
Continuous TA=25°C Pulsed (Note 2)
ID IDM
Total Power Dissipation (Note 1)
TC=25°C TC=25°C
Operating and Storage Junction Temperature Range
TJ, TSTG
Electrical Characteristics @ TA = 25°C unless otherwise noted
Limit 30 ±20 106 500 300 150
-55 to 150
Unit V V A A W W °C
Parameter
Symb...
