SSC8160GS8
N-channel Small Switching MOSFET
Features
VDS 60V
VGS ±20V
RDSon TYP 2R@10V 3R@4V5
ID 200mA
ESD 3...
SSC8160GS8
N-channel Small Switching
MOSFET
Features
VDS 60V
VGS ±20V
RDSon TYP 2R@10V 3R@4V5
ID 200mA
ESD 3kV
General Description This device is an N-Channel enhancement mode
MOSFET, with low on-resistance, fast switching speed and low
threshold
voltage (2V), it is ideal for portable equipment.
Applications
Direct Logic-Level Interface: TTL/
CMOS Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc. Battery Operated Systems
Solid-State Relays Pin Configuration
Top View
D
3
Package Information
12 GS
Package:SOT523
Unit:mm
Dim Min
Typ Max
A
0.15
0.22
0.30
B
0.75
0.80
0.85
C
1.45
1.60
1.75
D
--
0.50
--
G
0.90
1.00
1.10
H
1.50
1.60
1.70
J
0.00
0.05
0.10
K
0.60
0.75
0.80
L
0.10
0.22
0.30
M
0.10
0.12
0.20
N
0.45
0.50
0.65
SSC-V1.0
http://www.afsemi.com
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Analog Future
SSC8160GS8
Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
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