SSC8339GS1
Dual P-Channel Enhancement Mode MOSFET
Features
VDS -30V
VGS ±20V
RDSon TYP 15mR@-10V 20mR@-4V5
ID -1...
SSC8339GS1
Dual P-Channel Enhancement Mode
MOSFET
Features
VDS -30V
VGS ±20V
RDSon TYP 15mR@-10V 20mR@-4V5
ID -10A
Applications
Load Switch
DCDC conversion NB battery
Pin configuration
General Description
Top View
D1 D1 D2 D2
This device is produced with high cell density, DMOS
trench technology, which is especially used to minimize
on-state resistance. This device is particularly suited for
low
voltage power management requiring a wild range
of given
voltage ratings(4.5V~25V) such as load switch
S1 G1 S2 G2
and battery protection.
Package Information
⑧ ⑦ ⑥⑤
①② ③ ④
SSC-1V0
SOP8 Unit:mm
http://www.afsemi.com
1/5
Analog Future
SSC8339GS1
Absolute Maximum Ratings @TA = 25℃ unless otherwise noted
Parameter Drain-Source
Voltage
Gate-Source
Voltage
Drain Current (Note 1)
Continuous TA=25°C Pulsed (Note 2)
Total Power Dissipation (Note 1) Operating and Storage Junction Temperature Range
Symbol VDSS VGSS
ID
P...
