SSC8428GN2
N-Channel Enhancement Mode MOSFET
Features
VDS VGS
20V ±12V
RDSon TYP 11mR@10V 13mR@4V5
ID 8A
Applic...
SSC8428GN2
N-Channel Enhancement Mode
MOSFET
Features
VDS VGS
20V ±12V
RDSon TYP 11mR@10V 13mR@4V5
ID 8A
Applications
Li-ion battery protection ;
Load swich
Pin configuration
Bottom View
16mR@2V5
Advanced trench process technology High Density Cell Design for Ultra Low On-Resistance High Power and Current handling capability Fully Characterized Avalanche
Voltage and Current
General Description The SSC8428GN2 combines advanced trench
MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
DFN2X2-6L
Package Information
SSC-1V0
1/5
http://www.afsemi.com
SSC8428GN2
Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
Drain-Source
Voltage
VDSS
Gate-Source
Voltage
VGSS
Drain Currentnote1
TA=25℃ TA=100℃
ID
Total Power Dissipation
PD
Operating Temperature Range
Topr
Storage Temperature Range
Tstg
Note...
