SSC8428GS6A
N-Channel Enhancement Mode MOSFET
Features
VDS VGS 20V ±12V
RDSon TYP 7mR@10V 10mR@4V5
ID 8A
Appli...
SSC8428GS6A
N-Channel Enhancement Mode
MOSFET
Features
VDS VGS 20V ±12V
RDSon TYP 7mR@10V 10mR@4V5
ID 8A
Applications
Li-ion battery protection ;
Load swich
Pin configuration
Top View
Advanced trench process technology High Density Cell Design for Ultra Low On-Resistance High Power and Current handling capability Fully Characterized Avalanche
Voltage and Current
General Description The SSC8428GS6A combines advanced trench
MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
SOT23-3
Package Information
SSC-V1.0
http://www.afsemi.com
1/6
Analog Future
SSC8428GS6A
Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter Drain-Source
Voltage
Gate-Source
Voltage
Drain Current note1
TA=25℃ TA=100℃
Total Power Dissipation
Operating and Storage Temperature Range Storage Temperature Range Note1：The maximum current ra...
