SSC8P20AN2
N-Channel Enhancement Mode MOSFET with PNP Transistor
Features
PNP Transistor
VCE VBE -40V -6V
VCESATMA...
SSC8P20AN2
N-Channel Enhancement Mode
MOSFET with PNP Transistor
Features
PNP Transistor
VCE VBE -40V -6V
VCESATMAX -500mV
IC -1.0A
Applications
Li Battery Charging
Pin configuration
General Description
SSC8P20AN2 combines an N-Channel enhancement mode power
MOSFET which is produced with high cell density and a Media Power PNP Transistor . The tiny and thin outline saves PCB consumption.
Package Information
Top View
SSC-1V0
http://www.afsemi.com
1/5
Analog Future
SSC8P20AN2
Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
Ratings
Unit
Drain-Source
Voltage Gate-Source
Voltage
VDS 20 VGS ±8
V
Drain Current (Note 1)
Continuous
0.8
ID A
Pulsed
3
Collector-Emitter
Voltage
VCEO
-40
V
Emitter-Base
Voltage
VEBO
-6
A
Collector Current
Collector Pulsed
Power Dissipation Derating above TA = 25°C (Note 1)
IC ICM Pd
1.0 2 1.5
A W
Junction and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
...
