SSC9926GS1

SSC9926GS1 Dual N-Channel Enhancement Mode MOSFET  Features  VDS VGS 20V ±12V RDSon TYP 21mR@4V5 22mR@3V8 26mR@2V5 ID 6A   General Description This device combines 2 N-channel enhancement mode MOSFETs,which use advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.  Package Information Applications  Li-ion battery;  Load swich;  Battery charger Pin configuration Top View D1 D1 D2 D2 S1 G1 S2 G2 ⑧ ⑦ ⑥⑤ ①② ③ ④ SOP8 Unit:mm SSC-1V0 http://www.afsemi.com 1/4 Analog Future SSC9926GS1  Absolute Maximum Ratings @ TA = 25°C unless otherwise specified Parameter Symbol Ratings Drain-Source Voltage VDSS 20 Gate-Source Voltage VGSS ±12 Drain Current (Note 1) ID 6 IDM 30 Total Power Dissipation (Note 1) PD 800 Operating and Storage Temperature Range TJ, TSTG -55 to +150 Note: 1. Mo...