SSCP005GN3

SSCP005GN3 High Frequency High Gain PNP Power BJT  Features PNP BJT VCE -40v VBE -6v Vcesat typ -150mv Ic -3A  Applications  battery powered circuits  low in-line power dissipation circuits  Pin configuration  General Description This device is produced with advanced high carrier density technology, which is especially used to minimize saturation voltage drop. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package. Excellent thermal and electrical capabilities.  Package Information Pin configuration(Top view) SSC-1V0 http://www.afsemi.com 1/5 Analog Future SSCP005GN3  Absolute Maximum Ratings @ TA = 25°C unless otherwise specified Parameter Symbol Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current TA = 25°C (Note 1) ...