SSD02N60SL

Elektronische Bauelemente SSD02N60SL 2A , 600V , RDS(ON) 4.2Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSD02N60SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications . TO-252 FEATURES Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available 1 Gate 2 Drain 3 Source A BC D GE K HF MJ N O P REF. Millimeter Min. Max. REF. Millimeter Min. Max. A 6.35 6.90 J 2.30 REF. B 4.95 5.50 K 0.64 1.14 C 2.10 2.50 M 0.50 1.14 D 0.43 0.9 N 1.3 1.8 E 6.0 7.5 O 0 0.13 F 2.80 REF P 0.58REF. G 5.40 6.40 H 0.60 1.20 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current TC=25°C TC=100°C ID 2 1.3 Pulsed Drain Current IDM 8 Total Power Dissipation Single Pulse Avalanche Energy 1 TC=25°C Derate above 25°C PD EAS 34 0.27 100 Operating Junction and Storage Temperature Range TJ, TSTG -55~150 Thermal Resistance Rating Maximum Thermal Resistance Junction-Ambient RθJA 110 Maximum Thermal Resistance Junction-Case Notes: 1. L=30mH,IAS=2.52A, VDD=145V, RG=25Ω, Starting TJ =25°C RθJC 3.7 Unit V V A A A W mJ °C °C / W °C / W http://www.SeCoSGmbH.com/ 18-Aug -2014 ...