SSD61N60SG

Elektronische Bauelemente SSD61 60SG 61A, 60V, RDS(O ) 9mΩ -Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSD61N60SG is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSD61N60SG meet the RoHS and Green Product with Function reliability approved. TO-252(D-Pack) FEATURES RDS(on)≦9mΩ @VGS=10V RDS(on)≦13mΩ @VGS=4.5V High speed power switching, Logic Level Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested TO-252 Package MARKING 61N60SG Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch A BC D GE 1 Gate 2 Drain 3 Source K HF MJ N O P REF. Millimeter Min. Max. REF. Millimeter Min. Max. A 6.35 6.9 J 2.3 REF. B 4.95 5.53 K 0.89 REF. C 2.1 2.5 M 0.45 1.14 D 0.41 0.9 N 1.55 Typ. E6 7.5 O 0 0.13 F 2.90 REF P 0.58 REF. G 5.4 6.4 H 0.6 1.2 ABSOLUTE MAXIMUM RATINGS (TJ=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (Silicon Limited) TC=25°C TC=100°C ID Continuous Drain Current (Package Limited) TC=25°C Pulsed Drain Current IDM Avalanche Energy, Single Pulse, @L=0.4mH TC=25°C EAS Power Dissipation TC=25°C PD Operating Junction and Storage Temperature Range TJ, TSTG Thermal Resistance Ratings...