Elektronische Bauelemente
SSD75 06-C
75A, 60V, RDS(O ) 8.5mΩ -Channel Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSD75N06-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications.
The SSD75N06-C meet the RoHS and Green Product requirement with full function reliability approved.
FEATURES
Lower .
N-Channel MOSFET
Elektronische Bauelemente
SSD75 06-C
75A, 60V, RDS(O ) 8.5mΩ -Channel Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSD75N06-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications.
The SSD75N06-C meet the RoHS and Green Product requirement with full function reliability approved.
FEATURES
Lower Gate Charge Advanced high cell density Trench technology Green Device Available
MARKING
75N06
= Date code
PACKAGE INFORMATION
Package
MPQ
TO-252
2.5K
Leader Size 13 inch
ORDER INFORMATION
Part Number
Type
SSD75N06-C
Lead (Pb)-free and Halogen-free
TO-252(D-Pack)
A BC
D
GE
K HF MJ
N O P
REF.
A B C D E F G H
Millimeter Min. Max.
6.30 6.90 4.95 5.53 2.10 2.50 0.40 0.90 6.00 7.70
2.90 REF. 5.40 6.40 0.60 1.20
REF.
J K M N O P
Millimeter Min. Max.
2.30 REF. 0.89 REF. 0.45 1.14 1.55 TYP. 0 0.15 0.58 REF.
2
Drain
1
Gate
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current 1@VGS=10V Pulsed Drain Current 2
TC=25°C TC=100°C
ID IDM
Power Dissipation
TC=25°C
PD
Operating Junction & Storage Temperature
Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case 1
TJ, TSTG Thermal Resistance Ratings
RθJA RθJC
Ratings 60 ±20 75 47 200 62.5
-55~150
62 2.