SSD75N06J

Elektronische Bauelemente SSD75N06J 75A, 60V, RDS(ON) 11.5mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION SSD75N06J uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. FEATURES Good stability and uniformity with high EAS High-density cell design for ultra low RDS(ON) Special processing technology for high ESD capability Fully characterized avalanche voltage and current APPLICATION Power switching application Hard switched and high frequency circuits Uninterruptible power supply MARKING CJU75N06 Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch TO-252(D-Pack) A BC D GE K HF MJ N O P REF. Millimeter Min. Max. REF. Millimeter Min. Max. A 6.35 6.90 J 2.336 REF. B 4.95 5.50 K 0.89 REF. C 2.10 2.50 M 0.50 1.14 D 0.665 Typ. N 1.55 Typ. E 6.0 7.5 O 0 0.13 F 2.90 REF P 0.58 REF. G 5.40 6.40 H 0.60 1.20 2 Drain 1 Gate ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current ID Pulsed Drain Current Single Pulsed Avalanche Energy 1 IDM EAS Thermal Resistance from Junction to Ambient RθJA Maximum Lead Temperature for Soldering Purposes @ 1/8’’ from case for 5 seconds TL Junction and Storage Temperature Range TJ, TSTG 3 Source Rating 60 ±20 75 300 300 100 260 150, -5...