DESCRIPTION
The SSF2318E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operate with ...
DESCRIPTION
The SSF2318E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operate with gate
voltages as low as 2.5V.
SSF2318E
20V N-Channel
MOSFET
FEATURES
● VDS = 20V,ID =6.5A RDS(ON) < 34mΩ @ VGS=1.8V RDS(ON) < 26mΩ @ VGS=2.5V RDS(ON) < 22mΩ @ VGS=4.5V
ESD Rating：2000V HBM
● High Power and Current Handling Capability ● Lead Free ● Surface Mount Package
Schematic Diagram Marking and Pin Assignment
APPLICATIONS
● Battery Protection ● Load Switch ● Power Management
SOT-23 Top View
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
2318E
SSF2318E
SOT-23
Ø330mm
Tape width 12mm
Quantity 3000 units
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation
ID IDM PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
20 ...
