Main Product Characteristics:
VDSS RDS(on)
20V 0.4Ω (typ.)
ID 0.54A
Features and Benefits:
SOT-363
Advanced MOSF...
Main Product Characteristics:
VDSS RDS(on)
20V 0.4Ω (typ.)
ID 0.54A
Features and Benefits:
SOT-363
Advanced
MOSFET process technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature
SSF2356G8
Marking and Pin Assignment
Schematic Diagram
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute max Rating:
Drain-Source
Voltage Gate-Source
Voltage
Parameter
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation Operating Junction and Storage Temperature Range
Thermal Resistance
Thermal Resistance,Junction-to-Ambient (Not...
