Main Product Characteristics:
VDSS RDS(on)
ID
-20V 38mΩ (typ.)
-5.5A ①
SOT-23-6
Features and Benefits:
Advanced MO...
Main Product Characteristics:
VDSS RDS(on)
ID
-20V 38mΩ (typ.)
-5.5A ①
SOT-23-6
Features and Benefits:
Advanced
MOSFET process technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature
SSF2437E
Marking and pin Assignment
Schematic diagram
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute max Rating: @TA=25℃ unless otherwise specified
Symbol ID @ TC = 25°C ID @ TC = 70°C IDM PD @TC = 25°C VDS VGS TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current ② Power Dissipation ...