SSF2715

www.DataSheet4U.com SSF2715 Features ■ ■ Extremely high dv/dt capability Low Gate Charge Qg results in Simple Drive Requirement 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability VDSS = 500V ID = 5A RDS(ON) = 1.2Ω ■ ■ ■ ■ Description SSF2715 is a new generation of high voltage N–Channel enhancement mode power MOSFETs and is obtained through an extreme optimization layout design, in additional to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability, provide superior switching performance, withstand high energy pulse in the avalanche, and increases packing density. SSF2715 TOP View (TO220) Application ■ ■ ■ High current, high speed switching Lighting Ideal for off-line power supply, adaptor, PFC Absolute Maximum Ratings Parameter ID@Tc=25 ْC ID@Tc=100ْC IDM PD@TC=25ْC VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current ① ① ③ ② ① Max. 5 3 20 80 0.67 ±30 120 5 8.5 4.5 –55 to +150 Units A W W/ ْC V mJ A mJ V/ns ْC Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-case Case-to-Sink,Flat,Greased Surface Junction-to-Ambient Min. — — — Typ. — 0.50 — Max. 1.56 — 62.5 ْC/W Units 1 ...