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SSF2841

Silikron Semiconductor

MOSFET

SSF2841 DESCRIPTION The SSF2841 uses advanced trench technology to provide excellent RDS(ON), low gate charge and opera...


Silikron Semiconductor

SSF2841

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Description
SSF2841 DESCRIPTION The SSF2841 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -0.7V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -20V,ID = -5A RDS(ON) <72mΩ @ VGS=-2.5V RDS(ON) < 50mΩ @ VGS=-4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package 43 21 5 678 Schematic diagram D1 S1 S1 S8S2F02854A1 G1 D2 S2 S2 G2 Application ●PWM applications ●Load switch ●Power management Pin Assignment PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size SSF2841 SSF2841 TSSOP-8 - TSSOP-8 top view Tape width - Quantity - ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous@ Current-Pulsed (Note 1) ID IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit -20 ±12 -5 -20 3.2 -55 To 150 Unit V V A A W ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 83 ℃/W ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current BVDSS IDSS IGSS VGS=0V ID=-250μA VDS=-20V,VGS=0V VGS=±12V,VDS=0V Min Typ Max Unit -20 V -1 μA ±100 nA ©Silikron Semiconductor C...




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