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SSF2N60 Datasheet

Part Number SSF2N60
Manufacturers Silikron
Logo Silikron
Description N-Channel enhancement mode power field effect transistors
Datasheet SSF2N60 DatasheetSSF2N60 Datasheet (PDF)

                                 SSF2N60  Main Product Characteristics: VDSS 600V RDS(on) ID 3.6ohm(typ.) 2A TO220    Marking and pin Assignm ent  Schematic dia gram  Features and Benefits: „ Advanced Process Technology „ Special designed for PWM, load switching dan gene ral pur pose applications „ Ultra low on-r esistance with low gate charg e „ Fastswitching and re verse b ody reco very „ 150 ℃ operati ng temperatur e       Description: These N-Ch annel en hancement mode power field ef .

  SSF2N60   SSF2N60






Part Number SSF2N60
Manufacturers GOOD-ARK
Logo GOOD-ARK
Description 600V N-Channel MOSFET
Datasheet SSF2N60 DatasheetSSF2N60 Datasheet (PDF)

Main Product Characteristics VDSS 600V RDS(on) 3.6ohm(typ.) ID 2A Features and Benefits TO-220  Advanced Process Technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature  Lead free product SSF2N60 600V N-Channel MOSFET Marking and Pin Assignment Schematic Diagram Description These N-Channel enhancement mode power field effect transistor.

  SSF2N60   SSF2N60







N-Channel enhancement mode power field effect transistors

                                 SSF2N60  Main Product Characteristics: VDSS 600V RDS(on) ID 3.6ohm(typ.) 2A TO220    Marking and pin Assignm ent  Schematic dia gram  Features and Benefits: „ Advanced Process Technology „ Special designed for PWM, load switching dan gene ral pur pose applications „ Ultra low on-r esistance with low gate charg e „ Fastswitching and re verse b ody reco very „ 150 ℃ operati ng temperatur e       Description: These N-Ch annel en hancement mode power field ef fect transistors are produced usin g silikron proprietary MOSFET te chnology. T his advance d technology has be en especially tailored t o minimize on-state resistance, provide superior switching performance, and withstand high ene rgy pulse in the avala nche and commutation mode. T hese devices are well suited for high ef ficiency switch mode power supplies Absolute max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS Drain-S VGS EAS IAS TJ TSTG Parameter Max. Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ 54 Linear Derating Factor ource Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=55mH Avalanche Current @ L=55mH Operating Junction and Storage Temperature Range 0.43 600 ± 30 110 2 -55 to + 150 2 1.3 8 W W/°C V V mJ A °C A Units ©Silikron Semiconductor CO.,LTD. 2011.08.18 www.silikron.com  Version : 1.0 pa ge 1 of 8 http://www.Datasheet4U.com                                .


2014-06-05 : SVD4N60D    SVD4N60T    SVD4N60F    SVD4N60FG    SVD4N60DTR    74F382    ENE201D-07A    ENE201D-10A    ENE201D-14A    ENE201D-20A   


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