SSF2N60D2

Main Product Characteristics VDSS RDS(on) ID 600V 3.7Ω (typ.) 2A TO-252 Features and Benefits  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature  Lead free product SSF2N60D2 600V N-Channel MOSFET Preliminary Marking and Pin Assignment Schematic Diagram Description It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute Max Rating Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=30mH Avalanche Current @ L=30mH Operating Junction and Storage Temperature Range Max. 2 1.3 8 34 0.27 600 ± 30 115 2.52 -55 to +150 Units A W W/°C V V mJ A °C www.goodark.com Page 1 of 7 Rev.1.0 SSF2N60D2 600V N-Channel MOSFET Preliminary Thermal Resistance Symbol RθJC RθJA Characteristics Junction-to-case③ Junction-to-ambient (t ≤ 10s) ④ Typ. — — Max. 3.7 110 Units ℃/W ℃/W Electrical C...