SSF3018

www.DataSheet4U.com SSF3018 Feathers: „ „ „ „ „ Advanced trench process technology Special designed for Convertors and power controls High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test ID=60A BV=100V Rdson=15mohm Description: The SSF3018 is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the cell density and reduces the on-resistance; its typical Rdson can reduce to 13.8mohm. Application: „ Power switching application Absolute Maximum Ratings Parameter ID@Tc=25ْ C ID@Tc=100ْC IDM PD@TC=25ْC VGS EAS EAR TJ TSTG Thermal Resistance Parameter RθJC Junction-to-case Min. — Typ. 0.85 Max. — Units ْC/W Continuous drain current,VGS@10V Continuous drain current,VGS@10V Pulsed drain current ① Power dissipation Linear derating factor Gate-to-Source voltage Single pulse avalanche energy ② Repetitive avalanche energy Operating Junction and Storage Temperature Range Max. 60 50 240 147 2.0 ±20 480 TBD –55 to +150 ْC W W/ْ C V mJ A SSF3018 TOP View (TO220) Units Electrical Characteristics @TJ=25 ْC(unless otherwise specified) Parameter BVDSS RDS(on) VGS(th) gfs IDSS Drain-to-Source breakdown voltage Static Drain-to-Source on-resistance Gate threshold voltage Forward transconductance — Drain-to-Source leakage current Gate-to-Source forward leakage Gate-to-Source reverse leakage Total gate charge Gate-to-Source charge 2009.7.15 Min. 100 —...