www.DataSheet4U.com SSF3018D
Feathers: Advanced trench process technology Special designed for Convertors and...
www.DataSheet4U.com SSF3018D
Feathers: Advanced trench process technology Special designed for Convertors and power controls High density cell design for ultra low Rdson Fully characterized Avalanche
voltage and current Avalanche Energy 100% test
ID=80A BV=100V Rdson=14mohm
Description: The SSF3018D is a new generation of middle
voltage and high current N–Channel enhancement mode trench power
MOSFET. This new technology increases the cell density and reduces the on-resistance; its typical Rdson can reduce to 11.6mohm. Application: Power switching application Absolute Maximum Ratings Parameter ID@Tc=25ْ C ID@Tc=100ْC IDM PD@TC=25ْC VGS EAS EAR TJ TSTG Thermal Resistance Parameter RθJC Junction-to-case Min. — Typ. 0.65 Max. — Units ْC/W Continuous drain current,VGS@10V Continuous drain current,VGS@10V Pulsed drain current ① Power dissipation Linear derating factor Gate-to-Source
voltage Single pulse avalanche energy ② Repetitive avalanche energy Operating Junction and Storage Temperature Range 80 70 320 192 2.0 ±20 460 TBD –55 to +150 ْC W W/ْ C V mJ A SSF3018D TOP View (TO220) Max. Units
Electrical Characteristics @TJ=25 ْC(unless otherwise specified)
Parameter BVDSS RDS(on) VGS(th) gfs IDSS Drain-to-Source breakdown
voltage Static Drain-to-Source on-resistance Gate threshold
voltage Forward transconductance Drain-to-Source leakage current Gate-to-Source forward leakage Gate-to-Source reverse leakage Total gate charge Gate-to-Source charge
2009.7.15
Min. 100 —...