SSF3036C

Main Product Characteristics: NMOS PMOS VDSS 30V -30V RDS(on) 32.4mohm 61.6mohm ID 4A -3.6A Features and Benefits:  Advanced Process Technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature SSF3036C DFN 3x2-8L Bottom View N-Channel Mosfet P-Channel Mosfet Schematic diagram Description: It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute max Rating: Symbol ID @ TC = 25°C IDM VGS PD @TC = 25°C TJ TSTG Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Pulsed Drain Current ② Gate to source voltage Power Dissipation ③ Operating Junction and Storage Temperature Range Max. N-Channel P-Channel 4 ① -3.6 ① 16 -14.4 ±12 ±12 2.1 1.3 -55 to + 150 -55 to + 150 Units A V W °C Thermal Resistance Symbol RθJA Characterizes Junction-to-ambient (t ≤ 5s) ④ Typ. — N-channel 60 Max. P-Channel 95 Units ℃/W ©Silikron Semiconductor CO.,LTD. 2012.02.02 www.silikron.com Version : 1.0 page 1 of 6 Electrical Characterizes @TA=25℃ unless otherwise specified Symbol V(BR)DSS RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Source breakdown ...