DESCRIPTION
The SSF3055 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is...
DESCRIPTION
The SSF3055 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a Battery protection or in other Switching application.
GENERAL FEATURES
● VDS = 25V,ID = 12A RDS(ON) < 120mΩ @ VGS=5V RDS(ON) < 90mΩ @ VGS=10V
● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package
Application
●Battery protection ●Load switch ●Power management
SSF3055
D G
S
Schematic diagram 3S 2D 1G
Marking and pin Assignment
TO-252(DPAK) top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
3055
SSF3055
To-252(DPAK)
-
Tape width -
Quantity -
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Drain-Source
Voltage Gate-Source
Voltage
Parameter
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation Operating Junction and Storage Temperature Range
Symbol VDS VGS ID IDM PD
TJ,TSTG
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown
Voltage Zero Gate
Voltage Drain Current
BVDSS IDSS
VGS=0V ID=250µA VDS=20V,VGS=0V
Gate-Body Leakage Current
IGSS VGS=±20V,VDS=0V
ON CHARACTERISTICS (Note 3) Gate Threshold
Voltage Drain-Source On-State Resistance
VGS(th) RDS(ON)
VDS=VGS,ID=250µA VGS=5V, ID=12A VGS=10V, ID=12A
Limit
25 ±20 12 45 48 -55 To 150
75
Unit
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