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SSF3092G1 Datasheet

Part Number SSF3092G1
Manufacturers Silikron
Logo Silikron
Description MOSFET
Datasheet SSF3092G1 DatasheetSSF3092G1 Datasheet (PDF)

Main Product Characteristics: VDSS 30V RDS(on) 92mohm(typ.) ID 1.4A ① SOT23 Features and Benefits:  Advanced trench MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature SSF3092G1 Marking and pin Assignment Schematic diagram Description: It utilizes the latest trench processing techniques to achieve the high cell density.

  SSF3092G1   SSF3092G1






MOSFET

Main Product Characteristics: VDSS 30V RDS(on) 92mohm(typ.) ID 1.4A ① SOT23 Features and Benefits:  Advanced trench MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature SSF3092G1 Marking and pin Assignment Schematic diagram Description: It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications Absolute max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current ② Power Dissipation Drain-Source Voltage Gate-.


2017-06-28 : 2N3879    2N6288    2N5432    2N3487    2N3490    2N5494    2N5433    MMSZ4678    MMSZ4679    MMSZ4680   


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